QPD1025L

Mfr.Part #
QPD1025L
Manufacturer
Qorvo
Package/Case
-
Datasheet
Download
Description
RF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V

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Manufacturer :
Qorvo
Product Category :
RF JFET Transistors
Gain :
22.9 dB
Id - Continuous Drain Current :
28 A
Maximum Drain Gate Voltage :
225 V
Maximum Operating Temperature :
+ 85 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
SMD/SMT
Operating Frequency :
1 GHz to 1.1 GHz
Output Power :
1.5 kW
Package / Case :
NI-1230-4
Packaging :
Tray
Pd - Power Dissipation :
758 W
Technology :
GaN-on-SiC
Transistor Type :
HEMT
Datasheets
QPD1025L

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