TSM4N60ECH C5G

Mfr.Part #
TSM4N60ECH C5G
Manufacturer
Taiwan Semiconductor
Package/Case
-
Datasheet
Download
Description
MOSFET 600V, 4A, Single N-Channel Power MOSFET

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Manufacturer :
Taiwan Semiconductor
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
4 A
Maximum Operating Temperature :
+ 150 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-251-3
Packaging :
Tube
Pd - Power Dissipation :
86.2 W
Qg - Gate Charge :
12 nC
Rds On - Drain-Source Resistance :
2 Ohms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
600 V
Vgs - Gate-Source Voltage :
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage :
3 V
Datasheets
TSM4N60ECH C5G

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