SI8401DB-T1-E3
- Mfr.Part #
- SI8401DB-T1-E3
- Manufacturer
- Vishay Semiconductors
- Package/Case
- -
- Datasheet
- Download
- Description
- MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V
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- Manufacturer :
- Vishay Semiconductors
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 4.9 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- MicroFoot-4
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 2.77 W
- Qg - Gate Charge :
- 17 nC
- Rds On - Drain-Source Resistance :
- 95 mOhms
- Technology :
- SI
- Tradename :
- TrenchFET
- Transistor Polarity :
- P-Channel
- Vds - Drain-Source Breakdown Voltage :
- 20 V
- Vgs - Gate-Source Voltage :
- - 12 V, + 12 V
- Vgs th - Gate-Source Threshold Voltage :
- 1.4 V
- Datasheets
- SI8401DB-T1-E3
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