SI8401DB-T1-E3

Mfr.Part #
SI8401DB-T1-E3
Manufacturer
Vishay Semiconductors
Package/Case
-
Datasheet
Download
Description
MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V

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Manufacturer :
Vishay Semiconductors
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
4.9 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
MicroFoot-4
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
2.77 W
Qg - Gate Charge :
17 nC
Rds On - Drain-Source Resistance :
95 mOhms
Technology :
SI
Tradename :
TrenchFET
Transistor Polarity :
P-Channel
Vds - Drain-Source Breakdown Voltage :
20 V
Vgs - Gate-Source Voltage :
- 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage :
1.4 V
Datasheets
SI8401DB-T1-E3

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