- Manufacturer :
- Toshiba
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 30.8 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- DFN8x8-5
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 240 W
- Qg - Gate Charge :
- 65 nC
- Rds On - Drain-Source Resistance :
- 78 mOhms
- Technology :
- SI
- Tradename :
- DTMOSIV-H
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 600 V
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 3.5 V
- Datasheets
- TK31V60X,LQ
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TK31A60W,S4VX | Toshiba | 50 | MOSFET N-Ch 30.8A 45W FET 600V 3000pF 86nC |
TK31E60W,S1VX | Toshiba | 7 | MOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC |
TK31E60X,S1X | Toshiba | 701 | MOSFET DTMOSIV-High Speed 600V 88m (VGS=10V) |
TK31J60W,S1VQ | Toshiba | 5,000 | MOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC |
TK31J60W5,S1VQ | Toshiba | 5,000 | MOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC |
TK31N60W,S1VF | Toshiba | 1 | MOSFET DTMOSIV 600V 88mOhm 30.8A 230W 3000pF |
TK31N60W5,S1VF | Toshiba | 95 | MOSFET MOSFET NChtrr135ns 0.082ohm DTMOS |
TK31N60X,S1F | Toshiba | 71 | MOSFET DTMOSIV-H/S 600V 88mOhmmax(VGS=10V) |
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TK31V60W5,LVQ | Toshiba | 3,797 | MOSFET N-Ch DTMOSIV 600V 240W 3000pF 30.8A |
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