SI4816BDY-T1-GE3
- Mfr.Part #
- SI4816BDY-T1-GE3
- Manufacturer
- Vishay Semiconductors
- Package/Case
- -
- Datasheet
- Download
- Description
- MOSFET 30V Vds 20V Vgs SO-8
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- Manufacturer :
- Vishay Semiconductors
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 6.8 A, 11.4 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 2 Channel
- Package / Case :
- SO-8
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 1.4 W, 2.4 W
- Qg - Gate Charge :
- 7.8 nC, 11.6 nC
- Rds On - Drain-Source Resistance :
- 11.5 mOhms, 18.5 mOhms
- Technology :
- SI
- Tradename :
- TrenchFET
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 30 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 1 V
- Datasheets
- SI4816BDY-T1-GE3
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