SI4816BDY-T1-E3

Mfr.Part #
SI4816BDY-T1-E3
Manufacturer
Vishay Semiconductors
Package/Case
-
Datasheet
Download
Description
MOSFET 30V Vds 20V Vgs SO-8

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Manufacturer :
Vishay Semiconductors
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
6.8 A, 11.4 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
2 Channel
Package / Case :
SO-8
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
1.4 W, 2.4 W
Qg - Gate Charge :
7.8 nC, 11.6 nC
Rds On - Drain-Source Resistance :
11.5 mOhms, 18.5 mOhms
Technology :
SI
Tradename :
TrenchFET
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
30 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
1 V
Datasheets
SI4816BDY-T1-E3

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