SCTL35N65G2V

Mfr.Part #
SCTL35N65G2V
Manufacturer
STMicroelectronics
Package/Case
-
Datasheet
Download
Description
MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ 40 A

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Manufacturer :
STMicroelectronics
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
40 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
PowerFLAT-5
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
417 W
Qg - Gate Charge :
73 nC
Rds On - Drain-Source Resistance :
67 mOhms
Technology :
SiC
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
650 V
Vgs - Gate-Source Voltage :
- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage :
5 V
Datasheets
SCTL35N65G2V

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