SQJB90EP-T1_GE3

Mfr.Part #
SQJB90EP-T1_GE3
Manufacturer
Vishay Semiconductors
Package/Case
-
Datasheet
Download
Description
MOSFET Dual N-Ch 80V Vds AEC-Q101 Qualified

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Manufacturer :
Vishay Semiconductors
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
30 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
2 Channel
Package / Case :
PowerPAK-SO-8-4
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
48 W
Qg - Gate Charge :
25 nC
Qualification :
AEC-Q101
Rds On - Drain-Source Resistance :
17.9 mOhms
Technology :
SI
Tradename :
TrenchFET
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
80 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
2.5 V
Datasheets
SQJB90EP-T1_GE3

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