TP65H035WSQA

Mfr.Part #
TP65H035WSQA
Manufacturer
Transphorm
Package/Case
-
Datasheet
Download
Description
MOSFET GAN FET 650V 47.2A TO247

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Manufacturer :
Transphorm
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
47.2 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-247-3
Packaging :
Tube
Pd - Power Dissipation :
187 W
Qg - Gate Charge :
24 nC
Qualification :
AEC-Q101
Rds On - Drain-Source Resistance :
41 mOhms
Technology :
GaN
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
650 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
3.4 V
Datasheets
TP65H035WSQA

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