TW070J120B,S1Q

Manufacturer :

Toshiba

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

36 A

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Package / Case :

TO-3P

Packaging :

Tube

Pd - Power Dissipation :

272 W

Qg - Gate Charge :

67 nC

Rds On - Drain-Source Resistance :

70 mOhms

Technology :

SiC

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

1.2 kV

Vgs - Gate-Source Voltage :

- 10 V, + 25 V

Vgs th - Gate-Source Threshold Voltage :

5.8 V