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RGS30TSX2DHRC11
- Mfr.Part #
- RGS30TSX2DHRC11
- Manufacturer
- ROHM Semiconductor
- Package/Case
- -
- Datasheet
- Download
- Description
- IGBT Transistors 10us Short-Circuit Tolerance, 1200V 15A, Built-In FRD, Automotive Field Stop Trench IGBT
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max :
- 1200 V
- Collector-Emitter Saturation Voltage :
- 1.7 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 30 A
- Maximum Gate Emitter Voltage :
- 30 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 267 W
- Datasheets
- RGS30TSX2DHRC11
Manufacturer related products
Catalog related products
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ROHM SemiconductorIGBT Transistors 10us Short-Circuit Tolerance, 1200V 40A, Field Stop Trench IGBT -
ROHM SemiconductorIGBT Transistors 10us Short-Circuit Tolerance, 1200V 15A, Automotive Field Stop Trench IGBT
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