GT30J121(Q)

Mfr.Part #
GT30J121(Q)
Manufacturer
Toshiba
Package/Case
-
Datasheet
Download
Description
IGBT Transistors 600V/30A DIS

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Manufacturer :
Toshiba
Product Category :
IGBT Transistors
Collector- Emitter Voltage VCEO Max :
600 V
Configuration :
Single
Continuous Collector Current at 25 C :
30 A
Maximum Gate Emitter Voltage :
20 V
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Package / Case :
TO-3P
Packaging :
Tube
Series :
GT30J121
Technology :
SI
Datasheets
GT30J121(Q)

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