GT50N322A

Manufacturer :

Toshiba

Product Category :

IGBT Transistors

Collector- Emitter Voltage VCEO Max :

1000 V

Collector-Emitter Saturation Voltage :

2.2 V

Configuration :

Single

Continuous Collector Current at 25 C :

50 A

Maximum Gate Emitter Voltage :

25 V

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Package / Case :

TO-3PN-3

Packaging :

Tube

Pd - Power Dissipation :

156 W

Series :

GT50N322

Technology :

SI