A2C50S65M2-F

Manufacturer :

STMicroelectronics

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

650 V

Collector-Emitter Saturation Voltage :

1.95 V

Configuration :

CIB

Continuous Collector Current at 25 C :

50 A

Gate-Emitter Leakage Current :

500 nA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 40 C

Package / Case :

ACEPACK-2-35

Packaging :

Tray

Pd - Power Dissipation :

208 W

Product :

IGBT Silicon Modules