A2C35S12M3-F

Manufacturer :

STMicroelectronics

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

1200 V

Collector-Emitter Saturation Voltage :

1.95 V

Configuration :

Converter Inverter Brake

Continuous Collector Current at 25 C :

35 A

Gate-Emitter Leakage Current :

500 nA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 40 C

Package / Case :

ACEPACK2

Packaging :

Tray

Pd - Power Dissipation :

250 W

Product :

IGBT Silicon Modules