FF200R12KS4

Manufacturer :

Infineon Technologies

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

1200 V

Collector-Emitter Saturation Voltage :

3.2 V

Configuration :

Dual

Continuous Collector Current at 25 C :

275 A

Gate-Emitter Leakage Current :

400 nA

Maximum Operating Temperature :

+ 125 C

Minimum Operating Temperature :

- 40 C

Package / Case :

62 mm

Packaging :

Tray

Pd - Power Dissipation :

1.4 kW

Product :

IGBT Silicon Modules