F3L150R07W2E3_B11

Manufacturer :

Infineon Technologies

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

650 V

Collector-Emitter Saturation Voltage :

1.45 V

Configuration :

IGBT-Inverter

Continuous Collector Current at 25 C :

150 A

Gate-Emitter Leakage Current :

400 nA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 40 C

Package / Case :

Module

Packaging :

Tray

Pd - Power Dissipation :

335 W

Product :

IGBT Silicon Modules