IFCM30U65GDXKMA1

Manufacturer :

Infineon Technologies

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

650 V

Collector-Emitter Saturation Voltage :

1.75 V

Configuration :

3-Phase

Continuous Collector Current at 25 C :

30 A

Gate-Emitter Leakage Current :

1 mA

Maximum Operating Temperature :

+ 100 C

Minimum Operating Temperature :

- 40 C

Package / Case :

MDIP-24

Packaging :

Tube

Pd - Power Dissipation :

60.4 W

Product :

IGBT Silicon Modules