F3L11MR12W2M1B65BOMA1

Manufacturer :

Infineon Technologies

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

1.2 kV

Collector-Emitter Saturation Voltage :

1.75 V

Configuration :

Dual

Continuous Collector Current at 25 C :

50 A

Gate-Emitter Leakage Current :

100 nA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 40 C

Package / Case :

Module

Packaging :

Tray

Pd - Power Dissipation :

20 mW

Product :

IGBT Silicon Carbide Modules