info@yc-chip.com
- Manufacturer :
- Toshiba
- Product Category :
- Bipolar Transistors - Pre-Biased
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Configuration :
- Single
- Continuous Collector Current :
- - 100 mA
- DC Collector/Base Gain hfe Min :
- 30
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- SMD/SMT
- Packaging :
- Reel
- Pd - Power Dissipation :
- 150 mW
- Peak DC Collector Current :
- 100 mA
- Series :
- RN2101MFV
- Transistor Polarity :
- PNP
- Typical Input Resistor :
- 4.7 kOhms
- Typical Resistor Ratio :
- 1
- Datasheets
- RN2101MFV(TPL3)
Manufacturer related products
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 8A low Vclamp: 7.5V Rdyn: 0.2Ohm Vrwm: 3.6V SOD-962 -
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.1Ohm VBR:6.2V Vrwm: 5.5V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.12Ohm VBR:5.0V Vrwm: 3.6V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Uni-Directional ESD Protection Diode VRWM= 3.3V Rdy=0.3 Ohm CT=0.6pF
-
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| RN2101,LF(CT | Toshiba | 13,640 | Bipolar Transistors - Pre-Biased Bias Resistor with Built-in Transistor |
| RN2101,LXHF(CT | Toshiba | 5,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single PNP Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=-50V, IC=-0.1A (SOT-416) |
| RN2101MFV,L3F | Toshiba | 5,000 | Bipolar Transistors - Pre-Biased Bias Resistor PNP -.1A -50V 4.7kohm |
| RN2101MFV,L3F(CT | Toshiba | 5,000 | Bipolar Transistors - Pre-Biased 4.7kohm/4.7kohm 0.1A SOT-723 50V |
| RN2101MFV,L3XHF(CT | Toshiba | 5,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q PNP Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=-50V, IC=-0.1A (SOT-723) |
| RN2102,LF(CT | Toshiba | 5,000 | Bipolar Transistors - Pre-Biased Bias Resistor with Built-in Transistor |
| RN2102,LXHF(CT | Toshiba | 5,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single PNP Q1BSR=10kO, Q1BER=10kO, VCEO=-50V, IC=-0.1A (SOT-416) |
| RN2102MFV(TPL3) | Toshiba | 5,000 | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 10K x 10Kohms |
| RN2102MFV,L3F(CT | Toshiba | 5,000 | Bipolar Transistors - Pre-Biased 10kohm 10kohm 0.1A SOT-723 50V |
| RN2102MFV,L3XHF(CT | Toshiba | 5,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q PNP Q1BSR=10kO, Q1BER=10kO, VCEO=-50V, IC=-0.1A (SOT-723) |
| RN2103,LF(CT | Toshiba | 11,952 | Bipolar Transistors - Pre-Biased TRANSISTOR |
| RN2103,LXHF(CT | Toshiba | 5,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q TR PNP Q1BSR=22kOhm, Q1BER=22kOhm, VCEO=-50V, IC=-0.1A (SOT-416) |
| RN2103MFV(TPL3) | Toshiba | 5,000 | Bipolar Transistors - Pre-Biased -50V -100mA 22x22Kohms |
| RN2103MFV,L3F(CT | Toshiba | 5,000 | Bipolar Transistors - Pre-Biased 22kohm 22kohm 0.1A SOT-723 50V |
| RN2103MFV,L3XHF(CT | Toshiba | 5,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q PNP Q1BSR=22kO, Q1BER=22kO, VCEO=-50V, IC=-0.1A (SOT-723) |
