info@yc-chip.com
- Manufacturer :
- Toshiba
- Product Category :
- Bipolar Transistors - Pre-Biased
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Configuration :
- Single
- Continuous Collector Current :
- 100 mA
- DC Collector/Base Gain hfe Min :
- 50
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- VESM-3
- Packaging :
- Reel
- Pd - Power Dissipation :
- 100 mW
- Peak DC Collector Current :
- 100 mA
- Series :
- RN1302
- Transistor Polarity :
- NPN
- Typical Input Resistor :
- 10 kOhms
- Typical Resistor Ratio :
- 1
- Datasheets
- RN1302TE85LF
Manufacturer related products
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 8A low Vclamp: 7.5V Rdyn: 0.2Ohm Vrwm: 3.6V SOD-962 -
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.1Ohm VBR:6.2V Vrwm: 5.5V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.12Ohm VBR:5.0V Vrwm: 3.6V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Uni-Directional ESD Protection Diode VRWM= 3.3V Rdy=0.3 Ohm CT=0.6pF
-
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| RN1301(TE85L,F) | Toshiba | 5,000 | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 4.7Kohms |
| RN1301,LF | Toshiba | 8,990 | Bipolar Transistors - Pre-Biased USM TRANSISTOR Pd 100mW F 250Mhz |
| RN1301,LXHF | Toshiba | 6,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN , R1=4.7kOhm, R2=4.7kOhm, VCEO=50V, IC=0.1A (SOT-323) |
| RN1302,LF | Toshiba | 11,780 | Bipolar Transistors - Pre-Biased USM PLN TRANSISTOR Pd=100mW F=1MHz |
| RN1302,LXHF | Toshiba | 6,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN , R1=10kOhm, R2=10kOhm, VCEO=50V, IC=0.1A (SOT-323) |
| RN1302SU,LF | Toshiba | 5,522 | Bipolar Transistors - Pre-Biased 50V VCBO 50V VCEO 100mA IC 100mW |
| RN1303(TE85L,F) | Toshiba | 5,000 | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22K x 22Kohms |
| RN1303,LF | Toshiba | 1,699 | Bipolar Transistors - Pre-Biased TRANSISTOR |
| RN1303,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q TR NPN BRT, 22kOhm, 22kOhm, 50V, 0.1A (SOT-323) |
| RN1304,LF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 47kohm |
| RN1304,LXHF | Toshiba | 6,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN , R1=47kOhm, R2=47kOhm, VCEO=50V, IC=0.1A (SOT-323) |
| RN1304TE85LF | Toshiba | 5,000 | Bipolar Transistors - Pre-Biased X34 Pb-F USM PLN (LF) TRANSISTOR Pd=100mW F=250MHz |
| RN1305(TE85L,F) | Toshiba | 5,000 | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 2.2K x 47Kohms |
| RN1305,LF | Toshiba | 166 | Bipolar Transistors - Pre-Biased USM PLN TRANSISTOR Pd=100mW F=1MHz |
| RN1305,LXHF | Toshiba | 6,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN , R1=2.2kOhm, R2=47kOhm, VCEO=50V, IC=0.1A (SOT-323) |
