RN2902FE,LXHF(CT

Mfr.Part #
RN2902FE,LXHF(CT
Manufacturer
Toshiba
Package/Case
-
Datasheet
Download
Description
Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-symmetrical) PNP x 2 Q1BSR=10kO, Q1BER=10kO, VCEO=-50V, IC=-0.1A (SOT-563)

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Toshiba
Product Category :
Bipolar Transistors - Pre-Biased
Collector- Emitter Voltage VCEO Max :
50 V
Configuration :
Dual
Continuous Collector Current :
100 mA
DC Collector/Base Gain hfe Min :
50 at - 10 mA, - 5 V
Maximum Operating Frequency :
200 MHz
Maximum Operating Temperature :
+ 150 C
Mounting Style :
SMD/SMT
Package / Case :
ES-6
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
100 mW
Transistor Polarity :
PNP
Typical Input Resistor :
10 kOhms
Typical Resistor Ratio :
1
Datasheets
RN2902FE,LXHF(CT

Manufacturer related products

  • Toshiba
    ESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 8A low Vclamp: 7.5V Rdyn: 0.2Ohm Vrwm: 3.6V SOD-962
  • Toshiba
    ESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.1Ohm VBR:6.2V Vrwm: 5.5V SOD-882
  • Toshiba
    ESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.12Ohm VBR:5.0V Vrwm: 3.6V SOD-882
  • Toshiba
    ESD Suppressors / TVS Diodes Uni-Directional ESD Protection Diode VRWM= 3.3V Rdy=0.3 Ohm CT=0.6pF
  • Toshiba
    ESD Suppressors / TVS Diodes ESD protection diode 80A +/-30kV

Catalog related products

  • Nexperia
    Bipolar Transistors - Pre-Biased TRANS RET TAPE-7
  • onsemi
    Bipolar Transistors - Pre-Biased SURF MT BIASED RES XSTR
  • ROHM Semiconductor
    Bipolar Transistors - Pre-Biased TRANS DIGITAL
  • ROHM Semiconductor
    Bipolar Transistors - Pre-Biased TRANS DIGITAL
  • ROHM Semiconductor
    Bipolar Transistors - Pre-Biased TRANSISTOR

Related products

Part Manufacturer Stock Description
RN2901,LF(CT Toshiba 8,796 Bipolar Transistors - Pre-Biased TRANSISTOR
RN2901,LXHF(CT Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q TR PNPx2 BRT, 4.7kOhm 4.7kOhm 4.7kOhm 4.7kOhm -50V (SOT-363)
RN2901FE(TE85L,F) Toshiba 5,000 Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRANSISTOR Pd=200mW F=200MHz
RN2901FE,LXHF(CT Toshiba 5,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-symmetrical) PNP x 2 Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=-50V, IC=-0.1A (SOT563)
RN2902,LF(CT Toshiba 5,989 Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
RN2902,LXHF(CT Toshiba 6,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-Sym) PNP x 2 , R1=10kOhm, R2=10kOhm, VCEO=-50V, IC=-0.1A (SOT-363)
RN2902FE,LF(CT Toshiba 5,000 Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
RN2903,LF(CT Toshiba 2,865 Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
RN2903,LXHF(CT Toshiba 6,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-Sym) PNP x 2 , R1=22kOhm, R2=22kOhm, VCEO=-50V, IC=-0.1A (SOT-363)
RN2903A-I/RM103 Microchip Technology 25,648 Sub-GHz Modules LoRa Transceiver Module 915MHz
RN2903A-I/RM105 Microchip Technology 11,985 Sub-GHz Modules LoRa Transceiver Module 915MHz
RN2903A-I/RMSA103 Microchip Technology 3,500 Sub-GHz Modules LoRa Transceiver Module South America
RN2903FE(TE85L,F) Toshiba 5,000 Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRANSISTOR Pd=200mW F=200MHz
RN2903FE,LXHF(CT Toshiba 5,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-symmetrical) PNP x 2 Q1BSR=22kO, Q1BER=22kO, VCEO=-50V, IC=-0.1A (SOT-563)
RN2904,LF(CT Toshiba 5,000 Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor