2N6312 TIN/LEAD

Manufacturer :

Central Semiconductor

Product Category :

Bipolar Transistors - BJT

Collector- Base Voltage VCBO :

40 V

Collector- Emitter Voltage VCEO Max :

40 V

Collector-Emitter Saturation Voltage :

0.7 V

Configuration :

Single

Emitter- Base Voltage VEBO :

5 V

Gain Bandwidth Product fT :

4 MHz

Maximum DC Collector Current :

10 A

Maximum Operating Temperature :

+ 200 C

Minimum Operating Temperature :

- 65 C

Mounting Style :

Through Hole

Package / Case :

TO-66-2

Packaging :

Tube

Pd - Power Dissipation :

75 W

Series :

2N6312

Transistor Polarity :

PNP