info@yc-chip.com
- Manufacturer :
- Toshiba
- Product Category :
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO :
- 20 V
- Collector- Emitter Voltage VCEO Max :
- 12 V
- Collector-Emitter Saturation Voltage :
- -
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 3 V
- Gain Bandwidth Product fT :
- 7 GHz
- Maximum DC Collector Current :
- 30 mA
- Maximum Operating Temperature :
- + 125 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SC-70-3
- Packaging :
- Cut Tape, Reel
- Pd - Power Dissipation :
- 100 mW
- Transistor Polarity :
- NPN
- Datasheets
- 2SC5065-O(TE85L,F)
Manufacturer related products
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 8A low Vclamp: 7.5V Rdyn: 0.2Ohm Vrwm: 3.6V SOD-962 -
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.1Ohm VBR:6.2V Vrwm: 5.5V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.12Ohm VBR:5.0V Vrwm: 3.6V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Uni-Directional ESD Protection Diode VRWM= 3.3V Rdy=0.3 Ohm CT=0.6pF
-
Catalog related products
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|---|---|---|---|
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| 2SC5085-Y(TE85L,F) | Toshiba | 889 | Bipolar Transistors - BJT Radio-Freq Bipolar 80mA 100mW 12V |
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| 2SC5086-O,LF | Toshiba | 18,079 | RF Bipolar Transistors Radio-Frequency Bipolar Transistor |
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