BFN26E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Bipolar Transistors - BJT

Collector- Base Voltage VCBO :

300 V

Collector- Emitter Voltage VCEO Max :

300 V

Collector-Emitter Saturation Voltage :

0.5 V

Configuration :

Single

Emitter- Base Voltage VEBO :

6 V

Gain Bandwidth Product fT :

70 MHz

Maximum DC Collector Current :

500 mA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 65 C

Mounting Style :

SMD/SMT

Package / Case :

SOT-23-3

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

360 mW

Series :

BFN26

Transistor Polarity :

NPN