2N5550TAR

Mfr.Part #
2N5550TAR
Manufacturer
onsemi / Fairchild
Package/Case
-
Datasheet
Download
Description
Bipolar Transistors - BJT NPN Si Transistor Epitaxial

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Manufacturer :
onsemi / Fairchild
Product Category :
Bipolar Transistors - BJT
Collector- Base Voltage VCBO :
160 V
Collector- Emitter Voltage VCEO Max :
140 V
Collector-Emitter Saturation Voltage :
0.25 V
Configuration :
Single
Emitter- Base Voltage VEBO :
6 V
Gain Bandwidth Product fT :
300 MHz
Maximum DC Collector Current :
0.6 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Package / Case :
TO-92-3 Kinked Lead
Packaging :
Ammo Pack
Pd - Power Dissipation :
625 mW
Series :
2N5550
Transistor Polarity :
NPN
Datasheets
2N5550TAR

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