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2N5401 PBFREE
- Mfr.Part #
- 2N5401 PBFREE
- Manufacturer
- Central Semiconductor
- Package/Case
- -
- Datasheet
- Download
- Description
- Bipolar Transistors - BJT PNP Gen Pr Amp
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO :
- 160 V
- Collector- Emitter Voltage VCEO Max :
- 150 V
- Collector-Emitter Saturation Voltage :
- 0.2 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 300 MHz
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-92-3
- Packaging :
- Bulk
- Pd - Power Dissipation :
- 1.5 W
- Series :
- 2N54
- Transistor Polarity :
- PNP
- Datasheets
- 2N5401 PBFREE
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| 2N5401 APM TIN/LEAD | Central Semiconductor | 5,000 | Bipolar Transistors - BJT Through-Hole-Transistor-Small Signal (<=1A)-PNP High Voltage |
| 2N5401 APP PBFREE | Central Semiconductor | 3,950 | Bipolar Transistors - BJT PNP 160Vcbo 150Vceo 5.0Vebo 600mA 625mW |
| 2N5401 APP TIN/LEAD | Central Semiconductor | 5,000 | Bipolar Transistors - BJT PNP 160Vcbo 150Vceo 5.0Vebo 600mA 625mW |
| 2N5401 TIN/LEAD | Central Semiconductor | 80,342 | Bipolar Transistors - BJT PNP 160Vcbo 150Vceo 5.0Vebo 600mA 625mW |
| 2N5401 TRA PBFREE | Central Semiconductor | 5,000 | Bipolar Transistors - BJT PNP 160Vcbo 150Vceo 5.0Vebo 600mA 625mW |
| 2N5401 TRA TIN/LEAD | Central Semiconductor | 5,000 | Bipolar Transistors - BJT PNP 160Vcbo 150Vceo 5.0Vebo 600mA 625mW |
| 2N5401 TRE PBFREE | Central Semiconductor | 5,000 | Bipolar Transistors - BJT Through-Hole-Transistor-Small Signal (<=1A)-PNP High Voltage |
