T1G4012036-FL

Manufacturer :

Qorvo

Product Category :

RF JFET Transistors

Gain :

18.4 dB

Id - Continuous Drain Current :

12 A

Maximum Drain Gate Voltage :

- 2.9 V

Mounting Style :

SMD/SMT

Operating Frequency :

3.3 GHz

Output Power :

24 W

Package / Case :

NI-360

Packaging :

Tray

Pd - Power Dissipation :

117 W

Technology :

GaN-on-SiC

Transistor Polarity :

N-Channel

Transistor Type :

HEMT

Vds - Drain-Source Breakdown Voltage :

36 V