T2G6000528-Q3

Manufacturer :

Qorvo

Product Category :

RF JFET Transistors

Gain :

15 dB

Id - Continuous Drain Current :

650 mA

Maximum Drain Gate Voltage :

-

Mounting Style :

SMD/SMT

Operating Frequency :

DC to 6 GHz

Output Power :

10 W

Package / Case :

NI-200

Packaging :

Tray

Pd - Power Dissipation :

12.5 W

Technology :

GaN-on-SiC

Transistor Polarity :

N-Channel

Transistor Type :

HEMT

Vds - Drain-Source Breakdown Voltage :

-

Vgs - Gate-Source Breakdown Voltage :

-