info@yc-chip.com
- Manufacturer :
- Toshiba
- Product Category :
- RF Bipolar Transistors
- Collector- Emitter Voltage VCEO Max :
- 6 V
- Configuration :
- Single
- Continuous Collector Current :
- 100 mA
- DC Collector/Base Gain hfe Min :
- 200
- Emitter- Base Voltage VEBO :
- 0.6 V
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 11.5 GHz
- Package / Case :
- TO-236-3
- Packaging :
- Cut Tape, Reel
- Series :
- MT3S111
- Technology :
- SiGe
- Transistor Polarity :
- NPN
- Transistor Type :
- Bipolar
- Datasheets
- MT3S111(TE85L,F)
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ToshibaESD Suppressors / TVS Diodes Uni-Directional ESD Protection Diode VRWM= 3.3V Rdy=0.3 Ohm CT=0.6pF
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Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| MT3S111(TE85L,F) | Toshiba | 2,040 | RF Bipolar Transistors RF Bipolar Transistor .1A 700mW |
| MT3S111P(TE12L,F) | Toshiba | 3,665 | RF Bipolar Transistors RF Bipolar Transistor .1A 1W |
| MT3S111P(TE12L,F) | Toshiba | 3,665 | RF Bipolar Transistors RF Bipolar Transistor .1A 1W |
| MT3S113(TE85L,F) | Toshiba | 2,881 | RF Bipolar Transistors RF Bipolar Transistor .1A 800mW |
| MT3S113(TE85L,F) | Toshiba | 2,881 | RF Bipolar Transistors RF Bipolar Transistor .1A 800mW |
| MT3S113P(TE12L,F) | Toshiba | 5,000 | RF Bipolar Transistors RF Bipolar Transistor .1A 1.6W |
| MT3S113P(TE12L,F) | Toshiba | 5,000 | RF Bipolar Transistors RF Bipolar Transistor .1A 1.6W |
| MT3S113TU,LF | Toshiba | 2,970 | RF Bipolar Transistors RF Bipolar Transistor .1A 900mW |
| MT3S113TU,LF | Toshiba | 2,970 | RF Bipolar Transistors RF Bipolar Transistor .1A 900mW |
| MT3S16U(TE85L,F) | Toshiba | 1,909 | RF Bipolar Transistors RF 50mW 5.5dB 10V USM 60mA 2GHz |
| MT3S16U(TE85L,F) | Toshiba | 1,909 | RF Bipolar Transistors RF 50mW 5.5dB 10V USM 60mA 2GHz |
| MT3S20P(TE12L,F) | Toshiba | 352 | RF Bipolar Transistors X34 Pb-FREE PW-MINI DIODE |
| MT3S20P(TE12L,F) | Toshiba | 352 | RF Bipolar Transistors X34 Pb-FREE PW-MINI DIODE |
