BGA5H1BN6E6327XTSA1

Mfr.Part #
BGA5H1BN6E6327XTSA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
Download
Description
RF Amplifier RF MMIC SUB 3 GHZ

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Infineon Technologies
Product Category :
RF Amplifier
Gain :
18 dB
Maximum Operating Temperature :
+ 85 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
SMD/SMT
NF - Noise Figure :
0.7 dB
OIP3 - Third Order Intercept :
- 6 dBm
Operating Frequency :
2.3 GHz to 2.69 GHz
Operating Supply Current :
8.5 mA
Operating Supply Voltage :
1.5 V to 3.6 V
P1dB - Compression Point :
- 16 dBm
Package / Case :
TSNP-6
Packaging :
Cut Tape, Reel
Technology :
SiGe
Type :
Low Noise Amplifiers
Datasheets
BGA5H1BN6E6327XTSA1

Manufacturer related products

Catalog related products

  • Qorvo
    RF Amplifier Band 7 0.5W Doherty Small cell PA
  • Qorvo
    RF Amplifier 100W 50V 3.1-3.5GHz GaN PA EHS
  • Mini-Circuits
    RF Amplifier Gain Block, 10 - 30000 MHz, 50?
  • Qorvo
    RF Amplifier QPA1314D sellable die
  • Mini-Circuits
    RF Amplifier Gain Block, 500 - 30000 MHz, 50?

Related products

Part Manufacturer Stock Description
BGA524N6BOARDTOBO1 Infineon Technologies 3 RF Development Tools
BGA524N6E6327XTSA1 Infineon Technologies 23,195 RF Amplifier RF MMIC SUB 3 GHZ
BGA5L1BN6E6327XTSA1 Infineon Technologies 8,206 RF Amplifier RF MMIC SUB 3 GHZ
BGA5M1BN6E6327XTSA1 Infineon Technologies 11,801 RF Amplifier RF MMIC SUB 3 GHZ