BPW17N

Mfr.Part #
BPW17N
Manufacturer
Vishay Semiconductors
Package/Case
-
Datasheet
Download
Description
Phototransistors T-.75 450 to 1040nm +/-12 deg

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Vishay Semiconductors
Product Category :
Phototransistors
Collector- Emitter Voltage VCEO Max :
32 V
Collector-Emitter Breakdown Voltage :
32 V
Collector-Emitter Saturation Voltage :
0.3 V
Dark Current :
200 nA
Maximum On-State Collector Current :
50 mA
Maximum Operating Temperature :
+ 100 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
Through Hole
Package / Case :
T-3/4
Pd - Power Dissipation :
100 mW
Peak Wavelength :
825 nm
Product :
Phototransistors
Datasheets
BPW17N

Manufacturer related products

Catalog related products

  • Würth Elektronik
    Phototransistors WL-STCB SMT Phototransistor Chip
  • Würth Elektronik
    Phototransistors WL-STCW 0805 Wtrclr 940nm 100nA 35V150mW
  • Würth Elektronik
    Phototransistors WL-STSB 1002 Black 940nm 100nA 35V150mW
  • Würth Elektronik
    Phototransistors WL-STRB SMT Phototransistor Rev
  • Würth Elektronik
    Phototransistors WL-STCB 0603 Blk SMD 940nm 30nA 100mW

Related products

Part Manufacturer Stock Description
BPW16N Vishay Semiconductors 1,485 Phototransistors T-.75 450 to 1040nm +/-40 deg
BPW16N Vishay Semiconductors 1,485 Phototransistors T-.75 450 to 1040nm +/-40 deg
BPW17N Vishay Semiconductors 9,263 Phototransistors T-.75 450 to 1040nm +/-12 deg