AFIC10275GNR1 |
NXP Semiconductors |
5,000 |
RF MOSFET Transistors 978-1090 MHz, 250 W Peak, 50 V |
AFIC10275GNR1 |
NXP Semiconductors |
5,000 |
RF MOSFET Transistors 978-1090 MHz, 250 W Peak, 50 V |
AFIC10275NR1 |
NXP Semiconductors |
5,000 |
RF MOSFET Transistors 978-1090 MHz, 250 W Peak, 50 V |
AFIC10275NR1 |
NXP Semiconductors |
5,000 |
RF MOSFET Transistors 978-1090 MHz, 250 W Peak, 50 V |
AFIC10275NR5 |
NXP Semiconductors |
5,000 |
RF MOSFET Transistors Airfast RF LDMOS Wideband Integrated Power Amplifier, 978-1090 MHz, 250 W Peak, 50 V |
AFIC10275NR5 |
NXP Semiconductors |
5,000 |
RF MOSFET Transistors Airfast RF LDMOS Wideband Integrated Power Amplifier, 978-1090 MHz, 250 W Peak, 50 V |
AFIC31025GNR1 |
NXP Semiconductors |
5,000 |
RF MOSFET Transistors Airfast RF Power Integrated Power Amplifier, 25 W Pulse over 2400-3100 MHz, 32 V |
AFIC31025GNR1 |
NXP Semiconductors |
5,000 |
RF MOSFET Transistors Airfast RF Power Integrated Power Amplifier, 25 W Pulse over 2400-3100 MHz, 32 V |
AFIC31025NR1 |
NXP Semiconductors |
5,000 |
RF MOSFET Transistors Airfast RF Power Integrated Power Amplifier, 25 W Pulse over 2400-3100 MHz, 32 V |
AFIC31025NR1 |
NXP Semiconductors |
5,000 |
RF MOSFET Transistors Airfast RF Power Integrated Power Amplifier, 25 W Pulse over 2400-3100 MHz, 32 V |
AFIC901N-350MHZ |
NXP Semiconductors |
1 |
Sub-GHz Development Tools AFIC901N 350-520 MHz Reference Circuit |
AFIC901N-760MHZ |
NXP Semiconductors |
5,000 |
Sub-GHz Development Tools AFIC901N 760-870 MHz Reference Circuit |
AFIC901NT1 |
NXP Semiconductors |
2,316 |
RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1.8-1000 MHz, 30 dBm, 7.5 V |